Title of article
Hybrid magnetic transistor
Author/Authors
Meruvia، نويسنده , , Michelle S. and Benvenho، نويسنده , , Adriano R.V. and Hümmelgen، نويسنده , , Ivo A. and Li، نويسنده , , Rosamaria W.C. and Aguiar، نويسنده , , Luis Henrique J.M.C. and Gruber، نويسنده , , Jonas، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
27
To page
30
Abstract
We report the development of a hybrid semiconductor–metal–semiconductor permeable-base transistor in vertical architecture. This transistor has a p-type silicon collector, a thin tin layer as base and a magnetoresistive conjugated polymer, poly(9,9-dioctyl-1,4-fluorenylenevinylene), as emitter material. The transistor transport characteristics are dependent on the applied magnetic field and the base transport factor for positive charge carriers is nearly ideal, independently of the magnetic field in the investigated range.
Keywords
A. Semiconductors , A. Polymers , elastomers and plastics , D. Electronic transport
Journal title
Solid State Communications
Serial Year
2006
Journal title
Solid State Communications
Record number
1790864
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