Electrical characterization and modeling of Au/MEH-PPV/porous n+-GaAs/n+-GaAs heterojunction in direct and alternating current mode

Assembled heterojunction was fabricated by spin-coating poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene-vinylene)] (MEH-PPV) thin layers on straight and porous n+-GaAs substrates. The current–voltage and capacitance–voltage studies have shown an abrupt junction behavior with current conduction governed by SCLC and thermionic modes. Andersonsʹ rules were used to determine depletion width and balance bands discontinuities for both heterojunctions. Capacitance and conductance vs. frequency techniques were used to evaluate the density of interface states. Density values obtained from both techniques were in a good agreement.