Title of article
Interfacial electronic states of an anthracene derivative deposited on a SiO2 /Si substrate
Author/Authors
Sasaki، نويسنده , , Hiroyuki and Wakayama، نويسنده , , Yutaka and Chikyow، نويسنده , , Toyohiro and Imamura، نويسنده , , Masaki and Tanaka، نويسنده , , Akinori and Kobayashi، نويسنده , , Kenji، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
153
To page
156
Abstract
The interfacial electronic states of an anthracene derivative (9,10-bis (methylthio) anthracene) on a SiO2/Si(100) substrate were studied using ultraviolet photoelectron spectroscopy (UPS). From the UPS measurements, the work function of the sample surface was found to decrease with increasing molecular coverage in the sub-monolayer range. It is concluded that an interfacial electronic dipole (about 0.34 eV) forms at the molecule/ SiO2 interface and decreases the effective work function.
Keywords
A. Surfaces and interfaces , A. Organic semiconductors , E. Photoelectron spectroscopies , D. Electronic states
Journal title
Solid State Communications
Serial Year
2006
Journal title
Solid State Communications
Record number
1790912
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