• Title of article

    Hall mobility of amorphous Ge2Sb2Te5

  • Author/Authors

    Baily، نويسنده , , S.A. and Emin، نويسنده , , David and Li، نويسنده , , Heng، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    161
  • To page
    164
  • Abstract
    The electrical conductivity, Seebeck coefficient, and Hall coefficient of three-micron-thick films of amorphous Ge2Sb2Te5 have been measured as functions of temperature from room temperature down to as low as 200 K. The electrical conductivity manifests an Arrhenius behavior. The Seebeck coefficient is p-type with behavior indicative of multi-band transport. The Hall mobility is n-type and low (near 0.07 cm2/V s at room temperature).
  • Keywords
    A. Disordered systems , B. Galvanomagnetic effects
  • Journal title
    Solid State Communications
  • Serial Year
    2006
  • Journal title
    Solid State Communications
  • Record number

    1790915

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=1790915