Statistical appearance of nonuniform fluctuations in a wide-gap n+–n−–n–n+ device

A cross-correlation matrix applied for restoring the doping profile in an n+–n−–n–n+ device was reported recently [Y.-H. Shiau, Solid-State Electron. 50 (2006) 191]. In this paper we will show that this statistical method is very useful for detecting the dynamical processes embedded in semiconductor devices. In addition, extraction of nonuniform fluctuations hidden in this wide-gap semiconductor device could be helpful for clarifying the previous studies on several competing instabilities in InSb at 77 K [A. Čenys, G. Lasiene, K. Pyragas, Solid-State Electron. 35 (1992) 975; H. Ito, Y. Ueda, Phys. Lett. A 280 (2001) 312]. A general discussion about the application of the cross-correlation matrix to other pattern-forming systems is also given in the present study.