Title of article
Surface roughening in Si1−xGex alloy films by 100 MeV Au: Composition dependency
Author/Authors
Kanjilal، نويسنده , , A. and Kanjilal، نويسنده , , D.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
6
From page
531
To page
536
Abstract
Using a 100 MeV Au beam, the surface roughening kinetics of relaxed Si1−xGex alloy films for x = 0.5 and 0.7 are studied by means of ex-situ atomic force microscopy (AFM). Swift heavy ion (SHI) irradiation induced surface roughening behavior is demonstrated using the trend in variation of β as a function of fluence when the data are analyzed in terms of the Edwards–Wilkinson (EW) model. By employing the EW model, the observed surface roughening is explained on the basis of the competition between SHI induced sputtering and smoothening through redeposition of the sputtered atoms. The composition dependent variation of surface morphology with increasing fluence is discussed in the light of the strain distribution along the sample surface.
Keywords
A. SiGe , C. Atomic force microscopy , E. Irradiation , D. Surface roughening
Journal title
Solid State Communications
Serial Year
2006
Journal title
Solid State Communications
Record number
1791063
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