Author/Authors :
Kwon، نويسنده , , Y.H. and Kang، نويسنده , , T.W. and Park، نويسنده , , C.J. and Cho، نويسنده , , Hy-Sook Kim، نويسنده , , T.W and Lee، نويسنده , , J.Y. and Wang، نويسنده , , Kang L. and Kim، نويسنده , , B.O. and Kim، نويسنده , , S.M. and Cho، نويسنده , , Yong-Hoon، نويسنده ,
Abstract :
The optical properties and the deep levels in bulk Si1−xMnx formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si1−xMnx samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si1−xMnx material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si1−xMnx showed deep levels related to the interstitial and substitutial sites of the Mn+ ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si1−xMnx material.
Keywords :
A. Semiconductors , C. Impurities in semiconductor , D. Electronic states , D. Optical properties
