Solid state ion trap: Lateral confinement of quantum well excitons by oscillating piezoelectric field

We theoretically investigate a new type of lateral trap that can be used to confine quantum well excitons. By sending an ultrahigh frequency bulk acoustic wave from the substrate of III–V semiconductors such as GaAs or GaN, an oscillating piezoelectric field is generated. The effective potential induced by the oscillating piezoelectric field implements a type I lateral trap. Such a controllable quantum confinement is essential in many semiconductor nano-electronics and nano-photonics applications.