Title of article :
Influences of As flux on the lattice constants, magnetic and transport properties of (Ga, Mn)As epilayers
Author/Authors :
Gan، نويسنده , , H.D. and Zheng، نويسنده , , H.Z. and Deng، نويسنده , , J.J. and Bi، نويسنده , , J.F. and Zhu، نويسنده , , H. B. Ji، نويسنده , , Y. and Tan، نويسنده , , P.H and Yang، نويسنده , , F.H. and Zhao، نويسنده , , J.H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Abstract :
A series of (Ga, Mn)As epilayers have been prepared on semi-insulating GaAs (001) substrates at 230 ∘C by molecular-beam epitaxy under fixed temperatures of Ga and Mn cells and varied temperatures of the As cell. By systematically studying the lattice constants, magnetic and magneto-transport properties in a self-consistent manner, we find that the concentration of As antisites monotonically increases with increasing As flux, while the concentration of interstitial Mn defects decreases with it. Such a trend sensitively affects the properties of (Ga, Mn)As epilayers.
Keywords :
B. Molecular-beam epitaxy , A. Magnetic semiconductors , C. Electrical and magnetic properties (related to treatment conditions)
Journal title :
Solid State Communications
Journal title :
Solid State Communications
