Author/Authors :
Wang، نويسنده , , X.H. and Yao، نويسنده , , B. and Shen، نويسنده , , D.Z. and Zhang، نويسنده , , Z.Z. and Li، نويسنده , , B.H. and Wei، نويسنده , , Z.P. and Lu، نويسنده , , Y.M. and Zhao، نويسنده , , D.X. and Zhang، نويسنده , , J.Y. and Fan، نويسنده , , X.W. and Guan، نويسنده , , L.X. and Cong، نويسنده , , C.X.، نويسنده ,
Abstract :
A lithium and nitrogen doped p-type ZnO (denoted as ZnO: (Li, N)) film was prepared by RF-magnetron sputtering and post annealing techniques with c-Al2O3 as substrate. Its transmittance was measured to be above 95%. Three dominant emission bands were observed at 3.311, 3.219 and 3.346 eV, respectively, in the 80 K photoluminescence (PL) spectrum of the p-type ZnO:(Li, N), and are attributed to radiative electron transition from conduction band to a LiZn–N complex acceptor level (eFA), radiative recombination of a donor–acceptor pair and recombination of the LiZn–N complex acceptor bound exciton, respectively, based on temperature-dependent and excitation intensity-dependent PL measurement results. The LiZn–N complex acceptor level was estimated to be about 126 meV above the valence band by fitting the eFA data obtained in the temperature-dependent PL spectra.
Keywords :
D. p-Type , A. Thin films , D. Optical properties , D. Semiconductor
