Author/Authors :
Jia، نويسنده , , Tianqing and Baba، نويسنده , , Motoyoshi and Huang، نويسنده , , Min and Zhao، نويسنده , , Fuli and Qiu، نويسنده , , Jianrong and Wu، نويسنده , , Xiaojun and Ichihara، نويسنده , , Masaki and Suzuki، نويسنده , , Masayuki and Li، نويسنده , , Ruxin and Xu، نويسنده , , Zhizhan and Kuroda، نويسنده , , Hiroto، نويسنده ,
Abstract :
We present a simple route for ZnSe nanowire growth in the ablation crater on a ZnSe crystal surface. The crystal wafer, which was horizontally dipped in pure water, was irradiated by femtosecond laser pulses. No furnace, vacuum chamber or any metal catalyst were used in this experiment. The size of the nanowires is about 1–3 μm long and 50–150 nm in diameter. The growth rate is 1–3 μm/s, which is much higher than that achieved with molecular-beam epitaxy and chemical vapor deposition methods. Our discovery reveals a rapid and simple way to grow nanowires on designed micro-patterns, which may have potential applications in microscopic optoelectronics.
