Title of article
Rectification behaviour of molecular layers on Si(111)
Author/Authors
Hallbنck، نويسنده , , Ann-Sofie and Poelsema، نويسنده , , Bene and Zandvliet، نويسنده , , Harold J.W.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
4
From page
645
To page
648
Abstract
Reproducible and strong diode-like behaviour is observed for molecular films of 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) on n-type Si(111)- 7×7 surfaces studied by scanning tunnelling microscopy (STM) and spectroscopy (STS) at 77 K. The mechanism behind the rectification is likely to be related to the electron distribution at the molecule-silicon interface. We suggest that the adsorption of the molecular layer profoundly modifies the electronic structure of the Si(111)- 7×7 surface.
Keywords
A. Thin films , C. Scanning tunnelling microscopy , A. Surfaces and interfaces , A. Semiconductors
Journal title
Solid State Communications
Serial Year
2007
Journal title
Solid State Communications
Record number
1791432
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