Title of article
Crystal growth and dielectric, piezoelectric and elastic properties of Ca3TaGa3Si2O14 single crystal
Author/Authors
Shi، نويسنده , , Xuzhong and Yuan، نويسنده , , Duorong and Yin، نويسنده , , Xin and Wei، نويسنده , , Aijian and Guo، نويسنده , , Shiyi and Yu، نويسنده , , Fapeng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
4
From page
173
To page
176
Abstract
Single crystals of Ca3TaGa3Si2O14 (CTGS) were successfully grown from stoichiometric melts by the conventional Czochralski technique. The relative dielectric constants, the piezoelectric strain constants and the elastic compliance constants of CTGS single crystal have been determined by an electric bridge and resonance–antiresonance method. At room temperature, the two piezoelectric strain constants d 11 and d 14 are −4.58×10−12 coulombs per newton (C/N) and 10.43×10−12 coulombs per newton (C/N), respectively. The velocities of the bulk acoustic wave are also calculated.
Keywords
B. Crystal growth , D. Acoustic properties , D. Piezoelectricity
Journal title
Solid State Communications
Serial Year
2007
Journal title
Solid State Communications
Record number
1791477
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