Title of article
Microwave radiation induced collective response in Si/SiGe heterostructures with a 2D electron gas
Author/Authors
Sassine، نويسنده , , S. A. Krupko، نويسنده , , Yu. and Olshanetsky، نويسنده , , E.B. and Kvon، نويسنده , , Z.D. and Portal، نويسنده , , J.C. and Hartmann، نويسنده , , J.M. and ZHANG، نويسنده , , J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
3
From page
631
To page
633
Abstract
The collective resonant photoresponse in Si/SiGe structures with a 2DEG under microwave radiation is reported for the first time. The application of microwave radiation of various frequencies results in resonant photoconductivity at magnetic field values that are systematically lower than expected for the cyclotron resonance (CR) in an infinitely large two-dimensional electron system. The analysis of the data shows that the observed microwave radiation induced response is dominated by plasmon excitations.
Keywords
A. Surfaces and interfaces , D. Photoconductivity and photovoltaics , A. Semiconductors
Journal title
Solid State Communications
Serial Year
2007
Journal title
Solid State Communications
Record number
1791679
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