Deep level states and negative photoconductivity in n-ZnO/p-Si hetero-junction diodes

Negative photoconductivity (NPC) was observed in n-ZnO/p-Si heterojunction diode grown by ultra-high vacuum sputtering method under nitrogen ambient. Under the illumination of ultra-violet light, positive photoconductivity was observed at low bias voltages, whereas NPC was observed at high bias voltages. The defect states in the ZnO layers grown on Si were analyzed by photoluminescence and deep level transient spectroscopy measurements. Two deep levels were measured at Ec-0.51 eV and Ec-0.54 eV, which might be originated from oxygen vacancy and nitrogen atom related defects, respectively. Based on the simulation of band diagram, the defect states were located below Fermi level at zero bias voltage. However, as increasing the bias voltages, NPC was observed due to the increase of empty defect states. This analysis allowed us to consider the possibility that the NPC phenomenon in n-ZnO/p-Si heterojunction diode is originated dominantly from the defect states as a carrier recombination center in ZnO layer.