Author/Authors :
Liu، نويسنده , , W.F. and Bian، نويسنده , , J.M. and Hu، نويسنده , , L.Z. and Liang، نويسنده , , H.W. and Zang، نويسنده , , H.Q. and Sun، نويسنده , , J.C. and Zhao، نويسنده , , Z.W. and Liu، نويسنده , , A.M. and Du، نويسنده , , G.T.، نويسنده ,
Abstract :
A ZnO homojunction light emitting device was grown on n+ GaAs substrate by pulsed laser deposition. As-doped ZnO film by diffusion of As from the substrate was used for the p-type side and Al-doped ZnO film for the n-type side of the device. A distinct electroluminescence emission consisting of a dominant emission peak at ∼2.5 eV and a weak shoulder centered at ∼3.0 eV was observed at room temperature. The I – V characteristic of the ZnO homojunction showed a good rectifying behavior with a turn-on voltage of ∼4.5 V and a reverse breakdown voltage of ∼9 V.
Keywords :
B. Light emitting device , A. ZnO homojunction , D. As doping , D. Pulsed laser deposition
