Title of article
Electronic transport and magnetoresistance of a heterojunction composed of La0.7Ce0.3MnO3 and 1 wt% Nb-doped SrTiO3
Author/Authors
Xie، نويسنده , , Y.W. and Wang، نويسنده , , D.J. and Chen، نويسنده , , Y.Z. and Liang، نويسنده , , S. and Lü، نويسنده , , W.M. and Shen، نويسنده , , B.G. and Sun، نويسنده , , J.R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
131
To page
135
Abstract
We experimentally studied the transport properties and magnetoresistance behavior of a La0.7Ce0.3MnO3/SrTiO3 (doped by 1 wt% Nb) junction. Based on the analyses of the current–voltage relations and the depletion width, we conclude that the dominant transport mechanism of the junction is tunneling. The magnetoresistance of the junction is negative throughout the whole bias voltage range (from −1 V to 0.4 V) and the whole temperature range (below 300 K). It is believed that the magnetic field depresses the junction resistance by reducing the depletion width of the junction.
Keywords
A. Magnetically ordered materials , A. Heterojunctions , A. Thin films , A. Surfaces and interfaces
Journal title
Solid State Communications
Serial Year
2007
Journal title
Solid State Communications
Record number
1791728
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