Author/Authors :
Zhang، نويسنده , , Yanyi and Feng، نويسنده , , Feng and Rongxia، نويسنده , , Huang Jian-Shi، نويسنده , , Kai-Jiong Xiao، نويسنده , , Shaozhu and Wu، نويسنده , , Wei-Min Qu، نويسنده , , Timing and Wang، نويسنده , , Xiaohao and Han، نويسنده , , Zhenghe، نويسنده ,
Abstract :
Cerium dioxide (CeO2) films were fabricated on yttria-stabilized zirconia (YSZ) single crystals using unbalanced radio frequency (RF) magnetron sputtering. X-ray diffraction measurements revealed film strain discrepancies under different deposition parameters. Strain evolution was induced by varying sputtering pressure, RF power, and sputtering gas. A distinct morphological transition from a granular surface to an interwoven surface was also realized by varying the above parameters. On the basis of the “atomic peening” mechanism, the influence of different parameters on film strain was discussed. The film surface characteristics were revealed to be highly correlated with film strain. YBa2Cu3O7−δ (YBCO) films were post-deposited on the as-grown CeO2/YSZ(001) stack by using the trifluoroacetate metal-organic deposition (TFA-MOD) method. The superconducting property of the YBCO layer varied significantly with the morphology of the CeO2 buffer films.
Keywords :
Cerium dioxide , strain , morphology , Atomic peening