Title of article :
Effect of electron–hole spatial correlation on spin relaxation dynamics in InAs submonolayer
Author/Authors :
Sun، نويسنده , , Zheng and Xu، نويسنده , , Z.Y. and Ruan، نويسنده , , X.Z. and Ji، نويسنده , , Yang and Sun، نويسنده , , B.Q. and Wang، نويسنده , , M. and Ni، نويسنده , , H.Q.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
3
From page :
158
To page :
160
Abstract :
Using time-resolved photoluminescence and time-resolved Kerr rotation spectroscopy, we explore the unique electron spin behavior in an InAs submonolayer sandwiched in a GaAs matrix, which shows very different spin characteristics under resonant and non-resonant excitations. While a very long spin relaxation lifetime of a few nanoseconds at low temperature is observed under non-resonant excitation, it decreases dramatically under resonant excitation. These interesting results are attributed to the difference in electron–hole interactions caused by non-geminate or geminate capture of photo-generated electron–hole pairs in the two excitation cases, and provide a direct verification of the electron–hole spatial correlation effect on electron spin relaxation.
Keywords :
D. Spin relaxation , E. TRKR , A. InAs SML
Journal title :
Solid State Communications
Serial Year :
2007
Journal title :
Solid State Communications
Record number :
1791746
Link To Document :
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