Author/Authors :
Stehr، نويسنده , , Jan and Knies، نويسنده , , Christoph and Hofstaetter، نويسنده , , Albrecht W. Hofmann، نويسنده , , Detlev M. and Xu، نويسنده , , Wei and Zhou، نويسنده , , Yingxue and Zhang، نويسنده , , Xinyi، نويسنده ,
Abstract :
Mo3+ in ZnO is detected by means of electron paramagnetic resonance and the effective spin-Hamiltonian ( S ′ = 1 / 2 ) parameters of this 4d3 configuration are determined, i.e. g ∥ ′ = 1.963 and g ⊥ ′ = 3.933 for the g -tensor and A ∥ ′ = 132 MHz and A ⊥ ′ = 165 MHz for the hyperfine interaction (both ∥ and ⊥ to the crystal c axis). Considering the theoretical calculated valence band offsets of the semiconductors one can estimate the Mo2+/3+ level position to be about 1 eV below the conduction band. This emphasizes the deep donor nature of this impurity.
Keywords :
A. ZnO , A. Semiconductor , E. Electron paramagnetic resonance , B. Impurity
