Title of article :
Vacancy cluster-limited electronic transport in metallic carbon nanotube
Author/Authors :
Zeng، نويسنده , , Hui and Leburton، نويسنده , , Jean-Pierre and Hu، نويسنده , , Huifang and Wei، نويسنده , , Jianwei، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
4
From page :
9
To page :
12
Abstract :
We investigate the electronic properties of metallic (7,7) carbon nanotubes (CNT) in the presence of a variety of tetra- and hexa-vacancy defects, by using the first principles density functional theory (DFT) combined with the non-equilibrium Green’s function technique. From the view point of energetic stability large vacancies tend to split into pentagon and heptagon (5–7) defects. However, this does not preclude the presence of “holes” in the carbon nanotube by the nanoelectronic lithography technique. We show that the states linked to large vacancies hybridize with the extended states of the nanotubes to modify their band structure. As a consequence, the hole-like defects in the CNT lead to more prominent electronic transport compared to the situation in the defective CNT consisting of pentagon–heptagon pair defects. Our study suggests the possibility to improve the electronic properties of a defective carbon nanotube via morphological modifications induced by irradiation techniques.
Keywords :
A. Carbon nanotube , A. Vacancy cluster , E. First principle , D. Electronic transport
Journal title :
Solid State Communications
Serial Year :
2011
Journal title :
Solid State Communications
Record number :
1791883
Link To Document :
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