Author/Authors :
Seong، نويسنده , , Tae-Geun and Lee، نويسنده , , Beom-Seok and Choi، نويسنده , , Kyu Bum and Kweon، نويسنده , , Sang-Hyo and Kim، نويسنده , , Beom Yong and Jung، نويسنده , , Kyooho and Moon، نويسنده , , Ji Won and Lee، نويسنده , , Kee Jeong and Hong، نويسنده , , Kwon and Nahm، نويسنده , , Sahn، نويسنده ,
Abstract :
Amorphous Pr0.7Ca0.3MnO3 (APCMO) films were grown on a Pt/Ti/SiO2/Si (Pt–Si) substrate at temperatures below 500 °C and the Pt/APCMO/Pt–Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt–Si device followed Ohmʹs law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.
Keywords :
ReRAM , PCMO , Resistive switching , Thin film
