Simulation of resistance switching of memory cells based on solid electrolyte

The electrochemical reaction induced resistance switching of memory cells based on solid electrolyte is simulated by an interface-tracking method using a two-dimensional model. For the switching-on process, the simulating results show that metal dendrites will be formed in the solid electrolyte, switching the device to a low-resistance state. For the switching-off process, the dendrite will be dissolved and the conductive channel eventually breaks down, switching the device to a high-resistance state.