Title of article
Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures
Author/Authors
Shmidt، نويسنده , , N.M. and Vergeles، نويسنده , , P.S. and Yakimov، نويسنده , , E.E. and Yakimov، نويسنده , , E.B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
208
To page
211
Abstract
The effect of low-energy electron-beam (e-beam) irradiation on the InGaN-related cathodoluminescence in multiple quantum well (MQW) InGaN/GaN light-emitting diode (LED) structures has been studied. It is shown that the e-beam exposure leads to an increase of emission intensity and to a formation of new blue-shifted emission bands. The changes observed were explained by the enhancement of In diffusion stimulated by excess carrier recombination.
Keywords
D. Optical properties , A. Quantum wells , A. Semiconductors , C. Scanning and transmission electron microscopy
Journal title
Solid State Communications
Serial Year
2011
Journal title
Solid State Communications
Record number
1791969
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