• Title of article

    Evidence for the changes in hole injection mechanism with a CoPc hole injection layer

  • Author/Authors

    Shin، نويسنده , , Dongguen and Lee، نويسنده , , Jeihyun and Lee، نويسنده , , Hyunbok and Kim، نويسنده , , Hyein and Yi، نويسنده , , Yeonjin، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2014
  • Pages
    6
  • From page
    778
  • To page
    783
  • Abstract
    The hole injection in hole-only devices with the structures of Al/N,N′-bis(1-naphthyle)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/ITO and Al/NPB/cobalt phthalocyanine (CoPc)/ITO were analyzed. With the combined analysis of current density–voltage and impedance measurement, the charge injection mechanism based on the injection limited current model was investigated. The NPB single layer device shows Richardson–Schottky type thermionic emission in the entire applied bias range. On the other hand, the device with the CoPc hole injection layer shows thermionic emission until the applied bias reaches 3.7 V. Increasing the bias further, Fowler–Nordheim tunneling dominates the charge injection. The changes of hole injection mechanism were discussed by evaluating the energy level changes with internal field distributions.
  • Keywords
    Hole injection barrier , thermionic emission , Impedance measurement , FN tunneling , Organic electronic device
  • Journal title
    Current Applied Physics
  • Serial Year
    2014
  • Journal title
    Current Applied Physics
  • Record number

    1792108