Title of article
Low gain threshold density of a single InGaP quantum well sandwiched by digital alloy
Author/Authors
Kim، نويسنده , , B. and Kyhm، نويسنده , , K. and Je، نويسنده , , K.C. and Song، نويسنده , , J.D. and Kim، نويسنده , , S.Y. and Le، نويسنده , , E.H. and Taylor، نويسنده , , R.A.، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2014
Pages
3
From page
1293
To page
1295
Abstract
A single In0.49Ga0.51P quantum well sandwiched by In0.49Ga0.51P/In0.49(Ga0.6Al0.4)0.51P digital alloy structures was investigated in terms of optical modal gain, where gain saturation effects were also considered for both changes in wavelength and stripe length by using a modal gain contour map analysis. We found the gain threshold density is considerably lower by an order of magnitude when compared to the Mott density (∼2 × 1012 cm−2), which can be attributed to a carrier-harvesting effect through the mini-band of the digital alloy.
Keywords
Gain saturation , Optical modal gain , Digital-alloy , Superlattice
Journal title
Current Applied Physics
Serial Year
2014
Journal title
Current Applied Physics
Record number
1792215
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