Title of article :
Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films
Author/Authors :
Jeon، نويسنده , , Kiseok and Shin، نويسنده , , Seung Wook and Jo، نويسنده , , Jaeseung and Kim، نويسنده , , Myung Sang and Shin، نويسنده , , Jae Cheol and Jeong، نويسنده , , Chaehwan and Lim، نويسنده , , Jun Hyung and Song، نويسنده , , Junho and Heo، نويسنده , , Jaeyeong and Kim، نويسنده , , Jin Hyeok، نويسنده ,
Abstract :
High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2–4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices.
