Title of article
Energy of excitons and acceptor–exciton complexes to explain the origin of ultraviolet photoluminescence in ZnO quantum dots embedded in a SiO2 matrix
Author/Authors
Dallali، نويسنده , , Lobna and Jaziri، نويسنده , , Sihem and el Haskouri، نويسنده , , Jamal and Amorَs، نويسنده , , Pedro and Martيnez-Pastor، نويسنده , , Juan، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
822
To page
825
Abstract
Assuming finite depth and within the effective mass approximation, the energies of exciton states and of the acceptor–exciton complexes confined in spherical ZnO quantum dots (QDs) embedded in a SiO2 matrix are calculated using a matrix procedure, including a three-dimensional confinement of carrier in the QDs. This theoretical model has been designed to illustrate the two emission bands in the UV region observed in our experimental Photoluminescence spectrum (PL), with the first emission band observed at 3.04 eV and attributed to the bound ionized acceptor–exciton complexes, and the second one located at 3.5 and assigned to the free exciton. Our calculations have revealed a good agreement between the matrix element calculation method and the experimental results.
Keywords
A. ZnO , A. Quantum dots , C. Photoluminescence (PL) , D. Exciton complex
Journal title
Solid State Communications
Serial Year
2011
Journal title
Solid State Communications
Record number
1792415
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