Author/Authors :
Sheu، نويسنده , , Y.M. and Trigo، نويسنده , , M. C. Chien ، نويسنده , , Y.J. and Uher، نويسنده , , C. and Arms، نويسنده , , D.A. and Peterson، نويسنده , , E.R. and Walko، نويسنده , , D.A. and Landahl، نويسنده , , E.C. and Chen، نويسنده , , J. and Ghimire، نويسنده , , S. and Reis، نويسنده , , D.A.، نويسنده ,
Abstract :
We present Kapitza conductance measurements of the bismuth/sapphire interface using depth- and time-resolved X-ray diffraction, for Bi film thicknesses ranging from 65 to 284 nm. Our measurements provide complementary information about heat transport in the films; we directly observe the thinnest film to be uniformly heated within 1 ns, whereas the thickest film sustains a large near-surface temperature gradient for several ns. The deduced Kapitza conductance is 1950 W/cm2/K. This value is close to the theoretical prediction using the radiation limit.
Keywords :
A. Bismuth , E. X-rays , E. Ultrafast , D. Kapitza conductance
