Electron range-energy relationships for calculating backscattering coefficients in elemental and compound semiconductors

Backscattering coefficients for electrons normally impinging on Si, Ge, GaN, GaAs and InSb targets have been calculated by using the Vicanek and Urbassek theory [M. Vicanek, H.M. Urbassek, Phys. Rev. B 44 (1991) 7234] for incident energies ≤5 keV. Electron range has been calculated from various semi-empirical analytical expressions. The cross-sections used to describe the electron transport are determined via the appropriate analytical expression given by Jablonski [A. Jablonski, Phys. Rev. B 58 (1998) 16470] whose new improved version has been recently reported by Rouabah et al. [Z. Rouabah, N. Bouarissa, C. Champion, N. Bouaouadja, Appl. Surf. Sci. 255 (2009) 6217]. The results may be seen as the first predictions for low-energy electron backscattering coefficients impinging on GaN, GaAs and InSb semiconductors. The models used in the calculation of the electron range affect both the accuracy and behaviour of the electron backscattering coefficients.