Title of article
Engineering and metrology of epitaxial graphene
Author/Authors
Tzalenchuk، نويسنده , , Alexander and Lara-Avila، نويسنده , , Samuel and Cedergren، نويسنده , , Karin and Syv?j?rvi، نويسنده , , Mikael and Yakimova، نويسنده , , Rositza and Kazakova، نويسنده , , Olga and Janssen، نويسنده , , T.J.B.M. and Moth-Poulsen، نويسنده , , Kasper and Bj?rnholm، نويسنده , , Thomas and Kopylov، نويسنده , , Sergey and Fal’ko، نويسنده , , Vladimir and Kubatkin، نويسنده , , Sergey، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
6
From page
1094
To page
1099
Abstract
Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide.
Keywords
A. Graphene , E. Metrology , D. Photochemical gate , D. Quantum hall effect
Journal title
Solid State Communications
Serial Year
2011
Journal title
Solid State Communications
Record number
1792500
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