• Title of article

    Spin diffusion in -type (111) GaAs quantum wells

  • Author/Authors

    Sun، نويسنده , , B.Y. and Shen، نويسنده , , K.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    4
  • From page
    1322
  • To page
    1325
  • Abstract
    We utilize the kinetic spin Bloch equation approach to investigate the steady-state spin diffusion in n -type (111) GaAs quantum wells, where the in-plane components of the Dresselhaus spin–orbit coupling term and the Rashba term can be partially cancelled by each other. A peak of the spin diffusion length due to the cancellation is predicted in the perpendicular electric field dependence. It is shown that the spin diffusion length around the peak can be markedly controlled via temperature and doping. When the electron gas enters into the degenerate regime, the electron density also leads to observable influence on the spin diffusion in the strong cancellation regime. Furthermore, we find that the spin diffusion always presents strong anisotropy with respect to the direction of the injected spin polarization. The anisotropic spin diffusion depends on whether the electric field is far away from or in the strong cancellation regime.
  • Keywords
    A. Semiconductor , A. Quantum wells , D. Spin dynamics , D. Spin-orbit effects
  • Journal title
    Solid State Communications
  • Serial Year
    2011
  • Journal title
    Solid State Communications
  • Record number

    1792610