Title of article :
Electrical transport properties of Ag3Sn compound
Author/Authors :
Tian، نويسنده , , Yong and Zhang، نويسنده , , Qi-ming and Li، نويسنده , , Zhi Qing، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
4
From page :
1496
To page :
1499
Abstract :
The temperature behaviors of the electrical resistivity in polycrystalline Ag3Sn bulk samples were investigated experimentally. We found that the temperature dependence of resistivity shows concave function characteristics from 305 down to 26 K, and can be described by a parallel resistor model [H. Wiesmann et al., Phys. Rev. Lett. 38 (1977) 782]. The resistivities of all samples reveal T 2 behavior from 26 down to ∼ 10 K . We compared our data to the existing theories in which the T 2 dependence of resistivity has been proposed. However, we found none of them can describe the experimental data, and the physical mechanism of the T 2 behavior of resistivity at low temperatures is still enigmatical.
Keywords :
A. Disordered systems , C. Electronic transport
Journal title :
Solid State Communications
Serial Year :
2011
Journal title :
Solid State Communications
Record number :
1792700
Link To Document :
بازگشت