Title of article
Structural and optical characterization of wurtzite type ZnS
Author/Authors
Dيaz-Reyes، نويسنده , , J. and Castillo-Ojeda، نويسنده , , R.S. and Sلnchez-Espيndola، نويسنده , , R. and Galvلn-Arellano، نويسنده , , M. and Zaca-Morلn، نويسنده , , O.، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2015
Pages
7
From page
103
To page
109
Abstract
ZnS films were grown on (001) GaAs substrates at different temperatures by RF magnetron sputtering. The ZnS chemical stoichiometry was determined by Energy-dispersive X-ray spectroscopy (EDS), besides it allowed to find the residual impurities, mainly oxygen. The X-ray diffraction (XRD) analysis and Raman scattering reveal that ZnS deposited thin films showed hexagonal wurtzite crystalline phase. The films average crystallite size range was from 8.15 to 31.95 nm, which was determined using the Debye–Scherrer equation for the peak W(101). Besides an experimental study of first- and second-order Raman scattering of ZnS films is made. An energy level diagram involving oxygen traps and interstitial sulphur ions is used to explain the origin of the radiative transitions observed in the room temperature photoluminescence (PL) spectra.
Keywords
Raman scattering , II–VI semiconductor compounds , Hexagonal wurtzite-type ZnS , X-ray diffraction , SEM-EDS , Photoluminescence
Journal title
Current Applied Physics
Serial Year
2015
Journal title
Current Applied Physics
Record number
1792716
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