Title of article :
Theoretical investigations on the structural, lattice dynamical and thermodynamic properties of XC (X=Si, Ge, Sn)
Author/Authors :
Zhang، نويسنده , , Xudong and Quan، نويسنده , , Shanyu and Ying، نويسنده , , Caihong and Li، نويسنده , , Zhijie، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
5
From page :
1545
To page :
1549
Abstract :
First-principles calculations, which is based on the plane-wave pseudopotential approach to the density functional perturbation theory within the local density approximation, have been performed to investigate the structural, lattice dynamical, and thermodynamic properties of SiC, GeC, and SnC. The results of ground state parameters, phase transition pressure and phonon dispersion are compared and agree well with the experimental and theoretical data in the previous literature. The obtained phonon frequencies at the zone-center are analyzed. We also used the phonon density of states and quasiharmonic approximation to calculate and predict some thermodynamic properties such as entropy, heat capacity, internal energy, and phonon free energy of SiC, GeC, and SnC in B3 phase.
Keywords :
D. Lattice dynamics , A. Semiconductors , D. Thermodynamics properties
Journal title :
Solid State Communications
Serial Year :
2011
Journal title :
Solid State Communications
Record number :
1792725
Link To Document :
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