Title of article
The comparison of ZnO nanowire detectors working under two wavelengths of ultraviolet
Author/Authors
Lin، نويسنده , , Weihua and Yan، نويسنده , , Xiaoqin and Zhang، نويسنده , , Xiaomei and Qin، نويسنده , , Zi and Zhang، نويسنده , , Zheng and Bai، نويسنده , , Zhiming and Lei، نويسنده , , Yang and Zhang، نويسنده , , Yue، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
1860
To page
1863
Abstract
Schottky-barrier ultraviolet (UV) detectors based on ZnO-nanowires (NWs) were fabricated with Pt as electrodes in this investigation. The ZnO NWs synthesized by the hydrothermal method were characterized by field-emission scanning electron microscopy (FE-SEM), Raman and PL spectroscopy. Photoelectric properties under 254 and 365 nm UV light were investigated. It is found that the photo-response properties of the devices under 365 nm UV light are better than those under 254 nm UV light, which is further illustrated by light transmission theory, energy-band diagram and absorption spectra. The results demonstrate that ZnO NWs detectors with selectivity to near-UV (NUV) light are promising candidates in photoelectric devices.
Keywords
A. Nanostructures , A. Zinc oxide , C. Photoconductive detectors , D. Photo-response properties
Journal title
Solid State Communications
Serial Year
2011
Journal title
Solid State Communications
Record number
1792834
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