Title of article
Universal scheme for measuring the electron in semiconductors and application to a lightly-doped -GaAs sample
Author/Authors
Colton، نويسنده , , J.S. and Clark، نويسنده , , K. and Meyer، نويسنده , , D. and Park، نويسنده , , T. and Smith، نويسنده , , D. and Thalman، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
410
To page
413
Abstract
A new technique has been developed for measuring the T 1 spin lifetime of electrons, and should have near universal applicability among III–V semiconductors. The technique has been applied to a lightly doped GaAs sample with n = 3 × 10 14 cm − 3 . Spin decays were measured for fields from 0.5 to 7 T, at temperatures of 1.5 and 5 K. The spin lifetimes were shorter than expected, possibly due to compensation in the sample.
Keywords
A. Semiconductors , D. Spin dynamics , E. Light absorption and reflection , E. Time-resolved optical spectroscopies
Journal title
Solid State Communications
Serial Year
2012
Journal title
Solid State Communications
Record number
1793040
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