• Title of article

    Zn- and O-polar surface effects on Raman mode activation in homoepitaxial ZnO thin films

  • Author/Authors

    Souissi، نويسنده , , A. and Sartel، نويسنده , , C. and Sayari، نويسنده , , A. and Meftah، نويسنده , , A. and Lusson، نويسنده , , A. and Galtier، نويسنده , , P. and Sallet، نويسنده , , V. and Oueslati، نويسنده , , M.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    4
  • From page
    794
  • To page
    797
  • Abstract
    ZnO thin films were grown by metalorganic chemical vapor deposition on (0001) Zn- and O-polar surfaces of ZnO substrate. The surface morphology of these films was investigated by micro-Raman scattering and scanning electron microscopy. In the case of Zinc-polar face and using back scattering configuration, two new Raman bands were observed at 398 and 584.5 cm−1. They have been interpreted as quasi phonons TO (qTO) and LO (qLO) respectively. The origin of these modes was attributed to the particular morphology of ZnO films grown on Zn-polar face, which consists in c -axis nano-platelets, randomly tilted from the substrate. qTO and qLO frequencies have been calculated using the model of Loudon. SEM observation is in agreement with our Raman interpretation.
  • Keywords
    A. ZnO , B. Chemical vapor deposition , D. Quasi-phonon , E. Raman
  • Journal title
    Solid State Communications
  • Serial Year
    2012
  • Journal title
    Solid State Communications
  • Record number

    1793215