Title of article :
Nonlinear high-frequency hopping conduction in two-dimensional arrays of Ge-in-Si quantum dots: Acoustic methods
Author/Authors :
Drichko، نويسنده , , I.L. and Diakonov، نويسنده , , A.M. and Malysh، نويسنده , , V.A. and Smirnov، نويسنده , , I.Yu. and Koptev، نويسنده , , E.S. and Nikiforov، نويسنده , , A.I and Stepina، نويسنده , , N.P. and Galperin، نويسنده , , Y.M. and Bergli، نويسنده , , J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
4
From page :
860
To page :
863
Abstract :
Using acoustic methods we have measured nonlinear AC conductance in 2D arrays of Ge-in-Si quantum dots. The combination of experimental results and modeling of AC conductance of a dense lattice of localized states leads us to the conclusion that the main mechanism of AC conduction in hopping systems with large localization length is due to the charge transfer within large clusters, while the main mechanism behind its non-Ohmic behavior is charge heating by absorbed power.
Keywords :
D. Ac transport , A. Quantum dots
Journal title :
Solid State Communications
Serial Year :
2012
Journal title :
Solid State Communications
Record number :
1793258
Link To Document :
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