Title of article :
Physics of metal–correlated barrier with disorder–metal heterostructure
Author/Authors :
Gupta، نويسنده , , Sanjay and Gupta، نويسنده , , Tribikram، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
5
From page :
878
To page :
882
Abstract :
A metal-disordered and correlated barrier–metal heterostructure is studied at half-filling using unrestricted Hartree Fock method. The corresponding clean system has been shown to be an insulator for any finite on site correlation. Interestingly we find that introduction of explicit disorder induces an inhomogeneous, plane dependent, modulated spin and charge order. There is a metal–insulator transition at a critical value of disorder. The critical value corresponds to the point at which disorder kills the gap at half filling due to onsite correlation and completely destroys the plane dependent antiferromagnetic order. The wavefunctions are found to delocalize by increasing disorder, thus rendering the system metallic.
Keywords :
A. Disordered systems , A. Heterojunctions , A. Surfaces and interfaces , D. Electron–electron interaction
Journal title :
Solid State Communications
Serial Year :
2012
Journal title :
Solid State Communications
Record number :
1793265
Link To Document :
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