Title of article :
Effects of Cr and V impurities on cohesion properties of Pd/TiAl interfaces
Author/Authors :
Gong، نويسنده , , H.R. and Liang، نويسنده , , C.P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Abstract :
First principles calculations reveal that for Pd/TiAl interfaces the substitution of interface Ti atoms with Cr or V atoms is energetically favorable with negative heat of formation, and could bring about a very small increase of interface bond strength, while the interstitial Cr and V atoms should be unfeasible with highly positive heat of formation and would increase the bond lengths of interface Pd–Al and Pd–Ti bonds. Calculations also demonstrate that both Cr and V would induce an increase of interface energy, suggesting that the impurity atoms of Cr or V should be reduced to a minimum level, in order to get a thermally stable Pd/TiAl interface with a longer lifetime. In addition, it is found that the substitution of V at the Pd/TiAl interfaces should be much easier than that of Cr, which is in good agreement with similar experimental observations in the literature.
Keywords :
A. Surfaces and interfaces , A. Metals , D. Electron–electron interactions
Journal title :
Solid State Communications
Journal title :
Solid State Communications