• Title of article

    New superhard carbon phases between graphite and diamond

  • Author/Authors

    He، نويسنده , , Chaoyu and Sun، نويسنده , , Lizhong and Zhang، نويسنده , , Chunxiao and Peng، نويسنده , , Xiangyang and Zhang، نويسنده , , Kaiwang and Zhong، نويسنده , , Jianxin، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    4
  • From page
    1560
  • To page
    1563
  • Abstract
    Two new carbon allotropes (H-carbon and S-carbon) are proposed, as possible candidates for the intermediate superhard phases between graphite and diamond obtained in the process of cold compressing graphite, based on the results of first-principles calculations. Both H-carbon and S-carbon are more stable than previously proposed M-carbon and W-carbon and their bulk modulus are comparable to that of diamond. H-carbon is an indirect-band-gap semiconductor with a gap of 4.459 eV and S-carbon is a direct-band-gap semiconductor with a gap of 4.343 eV. The transition pressure from cold compressing graphite is 10.08 GPa and 5.93 GPa for H-carbon and S-carbon, respectively, which is in consistent with the recent experimental report.
  • Keywords
    C. Structure prediction , D. Superhard , D. Bulk modulus
  • Journal title
    Solid State Communications
  • Serial Year
    2012
  • Journal title
    Solid State Communications
  • Record number

    1793564