Title of article :
New superhard carbon phases between graphite and diamond
Author/Authors :
He، نويسنده , , Chaoyu and Sun، نويسنده , , Lizhong and Zhang، نويسنده , , Chunxiao and Peng، نويسنده , , Xiangyang and Zhang، نويسنده , , Kaiwang and Zhong، نويسنده , , Jianxin، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
4
From page :
1560
To page :
1563
Abstract :
Two new carbon allotropes (H-carbon and S-carbon) are proposed, as possible candidates for the intermediate superhard phases between graphite and diamond obtained in the process of cold compressing graphite, based on the results of first-principles calculations. Both H-carbon and S-carbon are more stable than previously proposed M-carbon and W-carbon and their bulk modulus are comparable to that of diamond. H-carbon is an indirect-band-gap semiconductor with a gap of 4.459 eV and S-carbon is a direct-band-gap semiconductor with a gap of 4.343 eV. The transition pressure from cold compressing graphite is 10.08 GPa and 5.93 GPa for H-carbon and S-carbon, respectively, which is in consistent with the recent experimental report.
Keywords :
C. Structure prediction , D. Superhard , D. Bulk modulus
Journal title :
Solid State Communications
Serial Year :
2012
Journal title :
Solid State Communications
Record number :
1793564
Link To Document :
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