• Title of article

    Imposing changes of band and spin–orbit gaps in GaNBi

  • Author/Authors

    Belabbes، نويسنده , , A. and Zaoui، نويسنده , , A. and Laref، نويسنده , , S. and Ferhat، نويسنده , , M.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    3
  • From page
    1700
  • To page
    1702
  • Abstract
    We present first-principles pseudopotential plane-wave calculations to explore the effects of alloying of non conventional III–V compound GaN with bismuth. We found a highly nonlinear reduction of the energy gap of GaN for small Bi composition. Consequently the optical band gap bowing is found extremely important and composition dependent. The stronger contribution is due principally to structural and, to less extent, to charge transfer effects. Moreover, because of strong relativistic effects caused by bismuth, we found a giant bowing for the spin–orbit splitting energy of valence band, by far the largest of any III–V ternary alloys.
  • Keywords
    A. GaNBi , A. Optical band-gap , D. Density functional theory
  • Journal title
    Solid State Communications
  • Serial Year
    2012
  • Journal title
    Solid State Communications
  • Record number

    1793627