Title of article :
Imposing changes of band and spin–orbit gaps in GaNBi
Author/Authors :
Belabbes، نويسنده , , A. and Zaoui، نويسنده , , A. and Laref، نويسنده , , S. and Ferhat، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
3
From page :
1700
To page :
1702
Abstract :
We present first-principles pseudopotential plane-wave calculations to explore the effects of alloying of non conventional III–V compound GaN with bismuth. We found a highly nonlinear reduction of the energy gap of GaN for small Bi composition. Consequently the optical band gap bowing is found extremely important and composition dependent. The stronger contribution is due principally to structural and, to less extent, to charge transfer effects. Moreover, because of strong relativistic effects caused by bismuth, we found a giant bowing for the spin–orbit splitting energy of valence band, by far the largest of any III–V ternary alloys.
Keywords :
A. GaNBi , A. Optical band-gap , D. Density functional theory
Journal title :
Solid State Communications
Serial Year :
2012
Journal title :
Solid State Communications
Record number :
1793627
Link To Document :
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