Title of article
Imposing changes of band and spin–orbit gaps in GaNBi
Author/Authors
Belabbes، نويسنده , , A. and Zaoui، نويسنده , , A. and Laref، نويسنده , , S. and Ferhat، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
3
From page
1700
To page
1702
Abstract
We present first-principles pseudopotential plane-wave calculations to explore the effects of alloying of non conventional III–V compound GaN with bismuth. We found a highly nonlinear reduction of the energy gap of GaN for small Bi composition. Consequently the optical band gap bowing is found extremely important and composition dependent. The stronger contribution is due principally to structural and, to less extent, to charge transfer effects. Moreover, because of strong relativistic effects caused by bismuth, we found a giant bowing for the spin–orbit splitting energy of valence band, by far the largest of any III–V ternary alloys.
Keywords
A. GaNBi , A. Optical band-gap , D. Density functional theory
Journal title
Solid State Communications
Serial Year
2012
Journal title
Solid State Communications
Record number
1793627
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