Title of article :
Electronic basis of the hcp, omega and bcc phases in group IVB elements under pressure or on alloying
Author/Authors :
Gyanchandani، نويسنده , , Jyoti and Sikka، نويسنده , , S.K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
5
From page :
80
To page :
84
Abstract :
Using the first principles DFT calculations, we have elucidated the electronic basis of the α→ω and the ω→β transitions in group IVB elements. After considering several possible factors that could give rise to the structural stability of a particular crystal structure, the changes in the band structure energy due to Peierls–Jahn–Teller distortion and crystal-field effects on sub orbital of d bands coupled with Ewald energy differences have been identified as the causes for these transitions. The role of van Hove singularities and consequent electronic topological transitions has also been examined.
Keywords :
B. DFT , D. Electronic basis , A. Group IVB elements , D. Phase transitions
Journal title :
Solid State Communications
Serial Year :
2013
Journal title :
Solid State Communications
Record number :
1793968
Link To Document :
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