Author/Authors :
Gao، نويسنده , , K.H. and LIN، نويسنده , , T. and Liu، نويسنده , , X.D. and Zhang، نويسنده , , X.H. and Li، نويسنده , , X.N. and Wu، نويسنده , , J. and Liu، نويسنده , , Y.F. and Wang، نويسنده , , X.F. and Chen، نويسنده , , Y.W. and Ni، نويسنده , , B. X. Dai، نويسنده , , N. and Chu، نويسنده , , J.H.، نويسنده ,
Abstract :
We study the electrical transport properties of F-doped SnO2 thin films in a temperature range from 12 to 300 K. Two samples exhibit metallic characteristics in high temperature ranges, where the phonon-dominated scattering is the main conduction mechanism. In the low temperature range below 60 K, the negative magnetoresistivity resulting from the weak localization effect is observed. Applying weak-localization theory, we have obtained the inelastic scattering time. The obtained inelastic scattering time is proportional to T−3, indicating that the electron–phonon interaction is main dephasing mechanism for electrons.
Keywords :
D. Electron dephasing mechanism , D. Phonon-dominated scattering , D. Weak localization effect , A. F-doped SnO2
