Title of article
A numerical study on subband structure of InxAl1−xN/GaN-based HEMT structures with low-indium (x<0.10) barrier layer
Author/Authors
Elibol، نويسنده , , K. and Atmaca، نويسنده , , G. and Tasli، نويسنده , , P. and Lisesivdin، نويسنده , , S.B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
5
From page
8
To page
12
Abstract
The effects of thicknesses and alloy fraction of different layers in a pseudomorphic InAlN/AlN/GaN HEMTs on 2DEG wave functions and carrier densities of subbands were investigated with the help of one-dimensional self-consistent solutions of nonlinear Schrödinger–Poisson equations. Higher carrier densities are obtained at lower indium mole fractions. Also, the effect of second subband is shown within these carrier density values.
Keywords
A. HEMT , D. Subband , D. 2DEG , A. InAlN/AlN/GaN
Journal title
Solid State Communications
Serial Year
2013
Journal title
Solid State Communications
Record number
1794159
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