Title of article :
Optical conductivity of semiconductor crystals with a screw dislocation
Author/Authors :
Taira، نويسنده , , Hisao and Shima، نويسنده , , Hiroyuki، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Pages :
4
From page :
61
To page :
64
Abstract :
We study ac electronic transport in semiconductor crystals with a screw dislocation. The screw dislocation in the crystal results in an effective potential field that has a pronounced effect on the quantum mechanical electronic transport of the system. Alternating current conductivity at a frequency around 100 GHz has been calculated, showing upward shift in the peak position with increasing the Fermi energy. The result is in contrast to the persistency in the peak position observed in a dislocation-free crystal penetrated by magnetic flux, despite the apparent similarity between the two crystalline systems.
Keywords :
A. Screw dislocation , D. Geometrical effects , D. Electronic transport
Journal title :
Solid State Communications
Serial Year :
2014
Journal title :
Solid State Communications
Record number :
1794565
Link To Document :
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