Strain induced composition profile in InGaN/GaN core–shell nanowires

A theoretical investigation on explanation of the composition profile in triangular and hexagonal cross-sections of InGaN/GaN core–shell nanowires is presented by combining the finite elements method (FEM) and method of moving asymptotes (MMA) in the framework of thermodynamics. Our models can account for strain effect on indium composition. In both models, the maximum indium content through segregation arises either at the side length or at the corner of the InGaN shell. The simulated results are found in good agreement with those of experimental data, thus providing a good guidance for the growth of high indium concentration of InGaN/GaN core–shell nanowires.