Title of article :
Compression behavior of nanocrystalline TiN
Author/Authors :
Wang، نويسنده , , Qiming and He، نويسنده , , Duanwei and Peng، نويسنده , , Fang and Xiong، نويسنده , , Lun and Wang، نويسنده , , Jianghua and Wang، نويسنده , , Pei and Xu، نويسنده , , Chao and Liu، نويسنده , , Jing، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Pages :
4
From page :
26
To page :
29
Abstract :
We have investigated the size-dependent high pressure behavior of nanocrystalline TiN using an angle-dispersive X-ray diffraction technique in a diamond-anvil cell at room temperature. No phase transition was observed during compression for each sample. A fit of the pressure versus volume data to a second Birch–Murnaghan equation yielded the following parameters for 16 nm, 34 nm and 80 nm, zero-pressure volume, V0=75.77 Å3, 75.98 Å3 and 76.06 Å3, bulk modulus, B0=320(7) GPa, 338(6) GPa and 287(3) GPa, respectively. This result along with a reanalysis of previous studies on TiN indicates that the bulk modulus first increases and then decreases with decreasing grain size. The compressibility of TiN has a minimum at ~34 nm.
Keywords :
A. Nanocrystalline , D. Bulk modulus , C. TiN , E. High pressure
Journal title :
Solid State Communications
Serial Year :
2014
Journal title :
Solid State Communications
Record number :
1794703
Link To Document :
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