• Title of article

    Compression behavior of nanocrystalline TiN

  • Author/Authors

    Wang، نويسنده , , Qiming and He، نويسنده , , Duanwei and Peng، نويسنده , , Fang and Xiong، نويسنده , , Lun and Wang، نويسنده , , Jianghua and Wang، نويسنده , , Pei and Xu، نويسنده , , Chao and Liu، نويسنده , , Jing، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2014
  • Pages
    4
  • From page
    26
  • To page
    29
  • Abstract
    We have investigated the size-dependent high pressure behavior of nanocrystalline TiN using an angle-dispersive X-ray diffraction technique in a diamond-anvil cell at room temperature. No phase transition was observed during compression for each sample. A fit of the pressure versus volume data to a second Birch–Murnaghan equation yielded the following parameters for 16 nm, 34 nm and 80 nm, zero-pressure volume, V0=75.77 Å3, 75.98 Å3 and 76.06 Å3, bulk modulus, B0=320(7) GPa, 338(6) GPa and 287(3) GPa, respectively. This result along with a reanalysis of previous studies on TiN indicates that the bulk modulus first increases and then decreases with decreasing grain size. The compressibility of TiN has a minimum at ~34 nm.
  • Keywords
    A. Nanocrystalline , D. Bulk modulus , C. TiN , E. High pressure
  • Journal title
    Solid State Communications
  • Serial Year
    2014
  • Journal title
    Solid State Communications
  • Record number

    1794703