Title of article
Room-temperature ferromagnetism in epitaxial p-type K-doped ZnO films
Author/Authors
Huang، نويسنده , , Yubin and Zhou، نويسنده , , Wei and Wu، نويسنده , , Ping، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
4
From page
31
To page
34
Abstract
Room-temperature ferromagnetism with p-type conductivity was observed in epitaxial K-doped ZnO films prepared by RF-magnetron sputtering. The coincident changes in the electrical, optical and magnetic properties indicate that the cation holes play important roles in mediating the ferromagnetism in K-doped ZnO films. The maximum saturation magnetization of 8 emu/cm3 was obtained in the 8% K-doped film and the thermal annealing in air could stabilize the ferromagnetic signature. Finally, first-principle calculations reveal that the magnetic properties in K-doped ZnO films are attributed to the strong p–p interaction between the unpaired 2p electrons at O sites.
Keywords
A. Epitaxial ZnO thin film , D. Ferromagnetism , D. p-Type conductivity , E. First-principle calculation
Journal title
Solid State Communications
Serial Year
2014
Journal title
Solid State Communications
Record number
1794732
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